Laser production and product qualification via accelerated life testing based on statistical modeling

ABSTRACT

A method is provided for improving performance testing in semiconductor lasers via an accelerated life model. By using an accelerated life model, operating conditions for performance tests, such as burn-in procedures and wafer qualification, are optimized with reduced cost and effort. The method is also used to improve maintenance of optical networks containing semiconductor lasers.

RELATED APPLICATION

This invention claims priority under 25 U.S.C. § 119(e) from U.S.provisional application Ser. No. 60/382,423 filed on May 20, 2002.

BACKGROUND OF THE INVENTION

1. The Field of the Invention

This application relates to performance and reliability testing of laserdiodes and other semiconductor lasers.

2. The Relevant Technology

Laser diodes and other semiconductor lasers are an essential componentof many current technologies. In many applications, such as opticalnetwork devices, the lasers must operate with high reliability in orderto provide continuous operation while minimizing maintenance time andexpense.

One common characteristic of many semiconductor lasers is a particularshape for the lifetime curve of the device. Many semiconductor lasersexhibit a ‘bathtub’ curve for average lifetime, as shown in FIG. 1. Thebathtub curve shape arises for devices that have a high ‘infantmortality’ rate, where a substantial number of devices fail after arelatively short period of use due to manufacturing defects.

As a response to the bathtub shaped failure curve, semiconductor lasersare typically subjected to performance testing in the form of a‘burn-in’ procedure. During a burn-in procedure, the laser is operatedat a specific current and temperature for a fixed duration. The laser isthen tested to see if it is still performing within desiredspecifications. Performing burn-in allows flawed devices to beidentified before they are incorporated into larger product assembliesor shipped to customers. This leads to increased reliability for theremaining lasers that are incorporated into products in the field. Theoperating conditions for a burn-in procedure are selected to identifylasers that exhibit early failure while minimizing the stress on theother properly manufactured lasers. The operating conditions for aburn-in procedure are typically developed by trial and error, andfinding a desirable set of operating conditions may take up to a year oftesting or longer. A key consideration in developing burn-in proceduresis to find the operating conditions that optimize the burn-in time orcost while still capturing all of the units that would fail burn-in.That is, a goal is to minimize the time and/or expense necessary to getto point t₀ on the bathtub curve shown in FIG. 1, where further testingdoes not identify any additional early failing units.

Another common form of performance testing is wafer qualification. Forlasers with high infant mortality rates, such as most laser diodes,every device manufactured will be subjected to burn-in, as the goal isto identify flawed devices. Wafer qualification, on the other hand, isperformed on a small sampling of the total devices produced. Duringwafer qualification, one or more representative die from a processedwafer are placed in a test apparatus for extended life testing of thedevice. The sample devices are tested to verify that no variations haveoccurred in the manufacturing process that would lead to impairedperformance for other devices in same production batch. Developingappropriate operating conditions for wafer qualification is also a timeconsuming process.

Because of the difficulties in developing operating conditions forperformance tests, device manufacturers typically develop a minimalnumber of operating conditions for each type of performance test. Thislimits flexibility during the manufacturing process, as these timeconsuming and costly procedures cannot be optimized to improveproductivity.

One method for collecting additional information about desirableoperating conditions for performance testing, including burn-in andwafer qualification, is via “Life Data Analysis.” Traditional “Life DataAnalysis” involves analysis of time-to-failure data obtained underselected operating conditions in order to quantify the lifecharacteristics of the product. Such life data, however, is difficult toobtain for products with long expected lifetimes. This difficulty,combined with the need to observe failures of products to betterunderstand their life characteristics, has led to the development ofmethods to force such long-lived products to fail more quickly. In otherwords, these methods attempt to accelerate the failure rate through theuse of high stress conditions.

Analysis of data from such accelerated life testing can yield valuableinformation regarding product life as a function of design conditions,but only if the ‘accelerated’ conditions of the failure test can beproperly correlated with operating conditions during normal use. Inorder to correlate the ‘accelerated’ and typical operating conditions,the accelerated life must incorporate the correct variable dependencies,such as the dependence of laser lifetime on the junction temperature ofthe laser diode.

Characterizing expected device lifetimes is also becoming increasinglyimportant for the development and characterization of end-user products.For example, previous generations of optical networks often made use oftransceivers that were cooled to maintain desired operating conditions.Newer generations of this technology, however, are moving towarduncooled transceivers. Due to the high reliability requirements ofoptical networks, understanding device lifetimes is important both foridentifying the level of redundancy required in the system as well asfor developing maintenance schedules.

Therefore, there is a need for an improved method of establishingoperating conditions for burn-in, wafer qualification, and otherperformance test procedures. The method should facilitate identificationof equivalent performance test operating conditions once baselineconditions have been established empirically. The method shouldincorporate life data from accelerated life testing for developingprocedure parameters. The method should allow for correlation ofperformance testing conditions with typical device operating conditionsin one or more desired applications. Additionally, the method shouldallow for characterization of device lifetimes under various operatingconditions in order to assist with the design and maintenance ofapplications involving the device.

SUMMARY OF INVENTION

The present invention provides a method for carrying out performancetests under operating conditions selected based on an accelerated lifemodel. This is accomplished by using the accelerated life model toidentify operating conditions equivalent to a known set of empiricallyderived performance test conditions. In an embodiment, an initial set ofperformance test operating conditions for a device is determined byempirical testing. An accelerated life model is then used to identifyalternative performance test operating conditions that will lead to asubstantially equivalent performance test. These performance testconditions may be selected to optimize the time or cost of performancetesting, or to satisfy another manufacturing constraint. In anembodiment, the accelerated life model includes a dependence on bothtemperature and operating current. One or more devices are thensubjected to performance testing at the selected conditions.

The present invention also provides a method for developing operatingconditions for performance testing by constructing an accelerated lifemodel to allow for performance testing under optimized conditions. In anembodiment, semiconductor lasers are subjected to stress testing under avariety of test conditions. The failure rate of the lasers is collectedand the data is used to construct a statistical failure model. Thefailure model is then used to fit parameters for an accelerated lifemodel. After developing the accelerated life model, the model may beused to identify various performance testing operating conditions thatwill result in equivalent stress on a semiconductor laser. The laser isthen subjected to performance testing at a selected set of operatingconditions.

Additionally, the present invention provides a method for designing andmaintaining optical networks and other products that utilizesemiconductor lasers. In an embodiment, operating conditions andreliability requirements are specified for an optical network or othersystem involving semiconductor lasers. An accelerated life model is usedto predict expected lifetimes for the lasers. Based on the operatingconditions, reliability requirements, and expected lifetimes, theoptical network or other system is designed to incorporate appropriatelevels of redundancy to insure continuous performance while reducingcosts. Alternatively, a maintenance program is developed to achieve thesame goals.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 depicts a typical bathtub-shaped lifetime curve for asemiconductor laser.

FIG. 2 depicts a flow chart of a portion of a laser manufacturingprocess related to performance testing in an embodiment of the presentinvention.

FIG. 3 depicts a flow chart of an embodiment where the present inventionis used for design of an optical network.

FIG. 4 depicts a flow chart for the development of an accelerated lifemodel according to an embodiment of the present invention.

FIG. 5 shows standardized residuals for the fit of failure data fromaccelerated aging tests to a lognormal distribution on a normalprobability plot.

FIG. 6 shows standardized residuals for the fit of failure data fromaccelerated aging tests to a Weibull distribution on a normalprobability plot.

FIG. 7 depicts a plot of reliability predictions for typical laseroperating conditions based on an accelerated life model derived from thelognormal distribution fit of failure data.

FIG. 8 depicts a plot of reliability predictions for typical laseroperating conditions based on an accelerated life model derived from theWeibull distribution fit of failure data.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Laser diodes are an example of a product that may be improved oroptimized by selecting optimized performance test conditions viaaccelerated life testing. Examples of laser diodes that may be improvedby this invention include 1.3 μm Fabry-Perot (FP) laser diodes producedby Demeter Technologies, Inc. of El Monte, Calif. [hereinafter“Demeter”]. Specific laser diodes available from Demeter include model900017, which is a laser diode suitable for short and medium distanceoptical fiber communication applications involving up to 2.5 gigabitsper second operation at up to 85° C. These laser diode chips use astrained layer multi-quantum well (MQW) structure based on the InGaAlAsmaterial system. The name derives from the way the laser cavity isgrown. Typical spectral widths for these laser diodes are on the orderof 3 to 6 nm. The laser chip is a ridge waveguide (RWG) structure withHR/AR facet coatings. The design is optimized for high-speed operationin an epi-up configuration. These high speed laser diodes are suitablefor a variety of applications, including transceiver applications.

For many semiconductor lasers, a suitable accelerated life modelincludes dependence on both the temperature and the drive current of thelaser. A detailed discussion of how to develop such a model will bepresented below, after a general discussion of the nature of theaccelerated life model. In an embodiment, the model takes the generalform of $\begin{matrix}{{{Median}\quad{Life}} = {A*{F(I)}*{\exp\left( \frac{E_{a}}{kT} \right)}}} & (1)\end{matrix}$Where I=drive current (mA)

-   -   T=junction temperature (Kelvin)    -   A=process dependent constant    -   E_(a)=activation energy (eV)    -   k=Boltzmann's constant, 8.16171*10⁻⁵ eV per ° C.        and F(I) is a function of current, such as (1/I)^(B) or another        relation to one. Note that previous efforts to model the        lifetime behavior of semiconductor lasers have not included an        explicit dependence on operating current. Explicit inclusion of        a dependence on current in the lifetime model is essential for        application of the model to semiconductor lasers. Those skilled        in the art will recognize that models similar to equation (1)        above may be applied to a variety of laser diodes and laser        systems, such as 1.3 um and 1.5 um FP laser diodes.

Once an accelerated life model has been developed, it can be used for avariety of applications. One potential application is optimization ofperformance testing conditions, such as operating conditions for burn-inor wafer qualification for semiconductor lasers. As mentioned above,developing burn-in, wafer qualification, or other performance testingconditions is a time consuming process. However, these performance testsare a necessary part of the manufacturing process for many semiconductorlasers due to the need for high reliability during operation. Undertraditional methods of laser manufacturing, once operating conditionsfor a particular performance test have been established the conditionscannot be varied, as the purpose of the performance testing is toguarantee reliability. Thus, performance test operating conditions aretypically not modified once a first set is established.

The methodology provided by the present invention allows for a way tomodify performance test operating conditions without having to repeatthe development process for a new set of operating conditions. Once afirst set of operating conditions have been developed for burn-in, waferqualification, or another performance test, the accelerated life modelmay be used to identify equivalent operating conditions that areoptimized to match a desired time, cost, or other manufacturingconsideration. As a result, burn-in conditions may be selected thatallow for full identification of initially flawed devices whileminimizing the amount of the effective device life consumed during theprocedure. Similarly, accelerated aging test data may be used to selectwafer qualification conditions resulting in thorough, accurate devicetesting in a greatly reduced time. In an embodiment, the acceleratedlife model may be used to change the duration of a performance test byusing the accelerated life model to determine the ‘acceleration factor’resulting from modifying other operating conditions, such as theoperating temperature or the operating current.

FIG. 2 provides an embodiment of the application of the presentinvention in a production environment. FIG. 2 begins toward the end ofthe production process with providing 210 a processed wafer diecontaining a laser. The laser is mounted on a TO header or othersuitable mount to allow connection of the laser to other circuitry. Someof these lasers are designated for wafer qualification, and aresubjected 225 to wafer qualification using conditions selected throughuse of the accelerated life model. Use of the accelerated life modelallows for reduction of the total wafer qualification time whileretaining confidence in the adequacy of the wafer qualification test.Briefly, the temperature and operating current values for the identifiedoperating conditions and the model operating conditions are insertedinto equation 1. The resulting equations at the two sets of conditionsmay be expressed as a multiplicative ratio describing how the medianlife changes when operating at the two conditions. This ratio, referredto as an acceleration factor, reflects the change in operating timerequired to subject the laser to an equivalent amount of stress at thetwo different operating conditions.

For the remaining lasers, after suitable mounting the laser is subjectedto burn-in 220. Once again, the conditions for burn-in are selected byusing an accelerated life model, allowing for reliable burn-in in ashorter time period. Lasers that survive burn-in are then incorporatedinto larger products such as transceivers or other laser assembliesduring packaging 230. After packaging, the laser may be subjected to asecond burn-in 240. Typically this secondary burn-in is at a lowerstress condition to test other components in the packaged assembly.However, if the conditions of the second burn-in are designed to furthertest the laser diode as well, this second burn-in may also be optimizedusing the present invention. In another embodiment, the first burn-inmay be performed after incorporation of the laser diode into a laserassembly product.

Those skilled in the art will recognize that this method forincorporating an accelerated life model into performance testing hasadditional applications. For example, once a suitable accelerated agingmodel has been developed, it can be distributed or sold to others, suchas by incorporation in software sold as part of an automatic testapparatus. A user of the test apparatus would have the flexibility tospecify desired burn-in or wafer qualification tests. In thisembodiment, a desired burn-in procedure could be entered for a first setof temperature and current conditions. The user could then request thatthe apparatus determine an equivalent burn-in procedure that required ashorter burn-in time, or the fastest equivalent burn-in procedure thatdid not exceed a particular current level.

Other embodiments of the present invention relate to the maintenance ofsystems that incorporate semiconductor lasers. In some embodiments, thepresent invention may be used in the maintenance of optical networks. Byusing the model, the available expected lifetime of semiconductor laserswithin the network may be calculated, thus allowing for improvedmaintenance of the network. This improvement may be in the form of animproved maintenance schedule, allowing for the maximum amount of timebetween replacement of laser assemblies without unduly jeopardizingnetwork performance. Alternatively, the improvement may come in the formof optical networks with the intelligence to request maintenance whenthe likelihood of failure for lasers within the network becomes too highbased on their operational history.

FIG. 3 provides a flow chart of an embodiment where the presentinvention is used for design of an optical network. The process beginswith specifying 310 the available operational life of the semiconductorlaser. In an embodiment, the available operational life may representthe initial expected lifetime of a semiconductor laser after burn-in andincorporation into the optical network. This initial expected lifetimewill be based on a model set of operating conditions for the laser, suchas a temperature and operating current. In another embodiment, theavailable operational life also includes information calculated based onthe operational history of the laser. In such an embodiment, theprevious operating conditions, including the duration of time spent ateach operating condition, may be tracked and accumulated for thiscalculation. After specifying the available operational life, theoperating conditions in the optical network are identified 330. In anembodiment, this may represent a forward-looking prediction of expectedoperating conditions within the optical network. In another embodiment,the operating conditions are identified in real time. In this latterembodiment, at least some of the operating conditions encountered by thesemiconductor laser are monitored during operation. Next, anacceleration factor is calculated 350. Using the acceleration factor, arevised available operational life may be calculated 370. In embodimentswhere the identified operating conditions are forward-lookingpredictions, determining the revised available operational life mayrequire relatively few calculations. For example, if the identifiedoperating conditions are specified to be constant during operation ofthe optical network, then only one acceleration factor needs to bedetermined. The available operational life may then be multiplied bythis acceleration factor to yield the revised value. In otherembodiments, the identified operating conditions may be measured as theyoccur. In such embodiments, there are several ways to develop revisedavailable operational lifetimes. For example, the operating history ofthe semiconductor laser may be recorded so that the availableoperational lifetime may be calculated at fixed intervals.Alternatively, the calculation could be done in real time, with theavailable operational lifetime being constantly updated during operationof the optical network. Other embodiments will be apparent to those ofskill in the art. By obtaining revised available operational lifetimesfor the semiconductor lasers in an optical network, the maintenance ofthe network may be improved by revising 390 the maintenance schedule instep. In embodiments where the revised lifetime is based onforward-looking calculations, the revised maintenance schedule may bedeveloped ahead of time. In other embodiments where the availableoperational lifetime is revised based on monitoring the actual operatingconditions, the revised maintenance schedule may represent a signalgenerated by the optical network requesting service. In suchembodiments, the signal could be generated, for example, when theavailable operational lifetime of a semiconductor laser within thenetwork falls below a threshold value.

In order to obtain the benefits of using an accelerated life model for agiven type of semiconductor laser, at some point parameters for themodel must be developed based on experimental data. One method forobtaining the necessary experimental data for an accelerated life modelis through accelerated aging tests. During accelerated aging tests,groups of semiconductor lasers are subjected to operating conditionsinvolving various temperatures and currents. Failures within thesemiconductor lasers are tracked, and the failure data is used toconstruct an accelerated life model.

The results of extensive reliability testing via long term acceleratedaging tests are summarized below. This includes a working example of theprocedure for constructing a failure model, a summary of raw data usedfor constructing an example of a failure models, and how parameters aredetermined for a sample thermodynamic lifetime model, or acceleratedlife model. This sample accelerated life model is then used to determinevarious time, temperature, and current combinations that produceequivalent burn-in and wafer qualification times for a device.

FIG. 4 provides an overview of the development of an accelerated lifemodel. During data accumulation 410, long-term aging test data isgathered for the device to be modeled. Typically this will involvegathering aging test data for a device at a number of operatingconditions. This aging test data may then be used in failure analysis430 to find parameters for fitting a time-to-failure probabilitydistribution function, such as a Weibull or Lognormal distribution.These probability distribution functions can then be fit 450 toparameters for the accelerated life model. For example, the mean time tofailure or median failure time may be calculated from the probabilitydistribution function for each operating condition. The combination ofmedian failure time and operating condition values, such as operationcurrent and operation temperature, can then be used to fit theparameters of the accelerated life model. After fitting the parameters,the accelerated life model may be used to select 470 appropriateoperating conditions for burn-in, wafer qualification, or otherreliability testing procedure. The working example below will providegreater detail as to how to perform the steps involved in developing anaccelerated life model.

Data Collection

In order to accumulate 410 accelerated aging data, a total of 270 FPlasers taken from normal production batches were subjected to stresstests in 9 groups of 30 units each at different levels of current andtemperature. The temperatures and currents were chosen to generatesignificant failure mode acceleration over expected applicationoperating conditions of up to 85° C. ambient temperature andapproximately 25 mA average operating current. The devices in each groupwere taken from different processing lots.

The tests were conducted at constant current in environmental chambersoperating at temperatures of 100° C., 125° C. and 150° C. The deviceswere loaded on burn-in boards and were driven at constant current levelsof 62 mA, 100 mA and 146 mA. Periodically, the devices were removed fromthe burn-in chambers and tested at room temperature. Output power andthreshold current readings were then obtained with the devices at 25° C.and 22 mA operating current.

For the devices involved in the accelerated aging tests, failure wasdefined as Change of Output Power>50% (3 dB drop or 1.76 dB increase) orChange of Threshold Current>50% (50% drop or 50% increasing). That is|ΔPower/Power_(Initial)|>50%  (2)or|ΔIth/Ith_(Initial)|>50%   (3)It is important to note that all failures recorded were actual failuresand not extrapolations to failure.

For each laser diode that failed under the criteria described inequations (2) and (3), the time-to-failure was recorded. Due to thenature of the test scheme, where devices were periodically removed fromthe burn-in test to determine their performance, the data is intervalcensored. As a result, the exact time-to-failure was not determined.Instead, the data indicates only that the failure occurred sometimeduring test intervals.

Table 1 provides a summary of the failure data collected for variousaging conditions. As mentioned above, a failure was defined as a changeof greater than 50% for either the output power or the threshold currentof a device.

TABLE 1 Reliability study matrix of forward current and ambienttemperatures employed. Total Burn-In Hours Group Aging ConditionsTo-Date # Failures/# Samples I 150° C., 146 mA 7100 26/30 II 150° C.,100 mA 7100 16/30 III 150° C., 62 mA  7100  4/30 IV 125° C., 146 mA 710016/30 V 125° C., 100 mA 7100  0/30 VI 125° C., 62 mA  7100  0/30 VII100° C., 146 mA 7100 10/30 VIII 100° C., 100 mA 7100  0/30 IX 100° C.,62 mA  7100  0/30

Since only groups I, II, III, IV and VII have failures, the lognormalcurve fitting and Weibull curve fitting was applied only to thesegroups. It would be possible to include groups V, VI, VIII, and IX inthe data analysis by extending the length of the burn-in testing tocause a sufficient number of failures of devices in those groups.

Analysis of Failure Data Via Lognormal and Weibull Distributions

During failure analysis 430, the censored time-to-failure interval datafor each group with suspensions (unfailed units) was analyzed. Thetime-to-failure data was fit to determine parameters for both alognormal distribution and Weibull distribution for comparison purposes.By fitting the time-to-failure data to a suitable distribution, such asa lognormal or Weibull distribution, the median life for each group offailure data could be calculated.

The lognormal distribution is a more versatile distribution than thenormal distribution as it has a range of shapes, and therefore is oftena better fit to reliability data. The lognormal probability densityfunction (p.d.f.) is $\begin{matrix}{{f(x)} = {\frac{1}{\left( {2\pi} \right)^{1/2}\sigma\quad x}{\exp\left\lbrack {- \frac{\left( {{\ln\quad x} - \mu} \right)^{2}}{2\sigma^{2}}} \right\rbrack}\quad\left( {{{for}\quad x} \geq 0} \right)}} & (4)\end{matrix}$where μ and σ are the mean and standard deviation (SD) of the lognormaldata.The mean (or mean-time-to-failure, MTTF), SD and median of the lognormaldistribution are given by $\begin{matrix}{{Mean} = {\exp\left( {\mu + \frac{\sigma^{2}}{2}} \right)}} & (5) \\{{SD} = \left\lbrack {{\exp\left( {{2\mu} + {2\sigma^{2}}} \right)} - {\exp\left( {{2\mu} + \sigma^{2}} \right)}} \right\rbrack^{1/2}} & (6) \\{{Median} = {\exp(\mu)}} & (7)\end{matrix}$The lognormal reliability function and failure rate are given by$\begin{matrix}{{R(x)} = {\int_{x}^{\infty}{{f(t)}{\mathbb{d}t}}}} & (8) \\{{\lambda(x)} = \frac{f(x)}{R(x)}} & (9)\end{matrix}$The parameters of the lognormal distribution can be estimated usingMaximum Likelihood Estimation (MLE). This general log-likelihoodfunction is composed of two summation portions: $\begin{matrix}{{\ln(L)} = {\Lambda = {{\sum\limits_{i = 0}^{F}{N_{i}{\ln\left\lbrack {\frac{1}{\sigma\quad X_{i}}{\phi\left( \frac{{\ln\left( X_{i} \right)} - \mu}{\sigma} \right)}} \right\rbrack}}} + {\sum\limits_{j = 1}^{S}{M_{j}{\ln\left\lbrack {1 - {\Phi\left( \frac{{\ln\left( X_{j}^{\prime} \right)} - \mu}{\sigma} \right)}} \right\rbrack}}}}}} & (10)\end{matrix}$where:

-   F is the number of groups of times-to-failure data points.-   N_(i) is the number of times-to-failure in the ith time-to-failure    data group-   μ is the mean of the natural logarithms of the time-to-failure-   σ is the standard deviation of the natural logarithms of the    time-to-failure.-   X_(i) is the time of the ith group of time-to-failure data.-   S is the number of groups of suspension data points.-   M_(j) is the number of suspension in ith group of suspension data    points.-   X_(j)′ is the time of the ith suspension data group.    The solution may be found by solving for a pair of parameters    ({circumflex over (μ)},{circumflex over (σ)}) so that    $\begin{matrix}    {\frac{\partial{\ln(L)}}{\partial\mu} = 0} & (11)    \end{matrix}$    and $\begin{matrix}    {{\frac{\partial{\ln(L)}}{\partial\sigma} = 0},} & (12)    \end{matrix}$    where $\begin{matrix}    {\frac{\partial{\ln(L)}}{\partial\mu} = {{\frac{1}{\sigma^{2}}{\sum\limits_{i = 1}^{F}{N_{i}\left( {{\ln\left( X_{i} \right)} - \mu} \right)}}} + {\frac{1}{\sigma}{\sum\limits_{j = 1}^{S}{M_{j}\frac{\phi\left( \frac{{\ln\left( x_{j} \right)} - \mu}{\sigma} \right)}{1 - {\Phi\left( \frac{{\ln\left( x_{j} \right)} - \mu}{\sigma} \right)}}}}}}} & (13)    \end{matrix}$ $\begin{matrix}    {\frac{\partial{\ln(L)}}{\partial\sigma} = {{\sum\limits_{i = 1}^{F}{N_{i}\left( {\frac{\left( {{\ln\left( X_{i} \right)} - \mu} \right)^{2}}{\sigma^{3}} - \frac{1}{\sigma}} \right)}} + {\frac{1}{\sigma}{\sum\limits_{j = 1}^{S}{M_{j}\frac{\left( \frac{{\ln\left( x_{j} \right)} - \mu}{\sigma} \right){\phi\left( \frac{{\ln\left( x_{j} \right)} - \mu}{\sigma} \right)}}{1 - {\Phi\left( \frac{{\ln\left( x_{j} \right)} - \mu}{\sigma} \right)}}}}}}} & (14)    \end{matrix}$ $\begin{matrix}    {{\phi(x)} = {\frac{1}{\sqrt{2\pi}}{\mathbb{e}}^{{- \frac{1}{2}}x^{2}}}} & (15)    \end{matrix}$ $\begin{matrix}    {{\Phi(x)} = {\frac{1}{\sqrt{2\quad\pi}}{\int_{- \infty}^{x}{{\mathbb{e}}^{{- \frac{1}{2}}t^{2}}\quad{\mathbb{d}t}}}}} & (16)    \end{matrix}$

The collected failure data were also fit using a Weibull distribution.The Weibull distribution is advantageous for reliability work due to thefact that by adjusting the distribution parameters it can be made to fitmany life distributions. The Weibulll p.d.f. is $\begin{matrix}{{f(x)} = {\frac{\beta}{\eta^{\beta}}x^{\beta - 1}{\exp\left\lbrack {- \left( \frac{x}{\eta} \right)^{\beta}} \right\rbrack}\quad\left( {{{for}\quad x} \geq 0} \right)}} & (17)\end{matrix}$where β is the shape parameter and η is the scale parameter, orcharacteristic life—it is the life at which 63.2 per cent of thepopulation will have failed.The mean (or MTTF) and median of Weibull distribution are given by$\begin{matrix}{{Mean} = {\frac{\eta}{\beta}{\Gamma\left( \frac{1}{\beta} \right)}}} & (18)\end{matrix}$ $\begin{matrix}{{Median} = {\eta\left( {1 - \frac{1}{\beta}} \right)}^{\frac{1}{\beta}}} & (19)\end{matrix}$The Weibull reliability function and failure rate are given by$\begin{matrix}{{R(x)} = {{\int_{x}^{\infty}{{f(t)}\quad{\mathbb{d}t}}} = {\exp\left( {- \frac{x}{\eta}} \right)}^{\beta}}} & (20)\end{matrix}$ $\begin{matrix}{{\lambda(x)} = {\frac{f(x)}{R(x)} = {\frac{\beta}{\eta}\left( \frac{x}{\eta} \right)^{\beta - 1}}}} & (21)\end{matrix}$The parameters of the Weibull distribution can be estimated usingMaximum Likelihood Estimation (MLE). This general log-likelihoodfunction is composed of two summation portions: $\begin{matrix}{{\ln(L)} = {\Lambda = {{\sum\limits_{i = 0}^{F}{N_{i}{\ln\left\lbrack {\frac{\beta}{\eta}\left( \frac{X_{i}}{\eta} \right)^{\beta - 1}{\mathbb{e}}^{- {(\frac{x_{i}}{\eta})}^{\beta}}} \right\rbrack}}} + {\sum\limits_{j = 1}^{S}{M_{j}\left( \frac{X_{j}^{\prime}}{\eta} \right)}^{\beta}}}}} & (22)\end{matrix}$where:

-   F is the number of groups of times-to-failure data points.-   N_(i) is the number of times-to-failure in the ith time-to-failure    data group.-   β is the Weibull shape parameter.-   η is the Weibull scale parameter.-   X_(i) is the time of the ith group of time-to-failure data.-   S is the number of groups of suspension data points.-   M_(j) is the number of suspension in ith group of suspension data    points.-   X_(j)′ is the time of the ith suspension data group.

The solution may be found by solving for a pair of parameters({circumflex over (β)},{circumflex over (η)}) so that$\frac{\partial{\ln(L)}}{\partial\beta} = 0$and ${\frac{\partial{\ln(L)}}{\partial\eta} = 0},$where $\begin{matrix}{\frac{\partial{\ln(L)}}{\partial\beta} = {{\frac{1}{\beta}{\sum\limits_{i = 1}^{F}N_{i}}} + {\sum\limits_{i = 1}^{F}{N_{i}{\ln\left( \frac{X_{i}}{\eta} \right)}}} - {\sum\limits_{i = 1}^{F}{{N_{i}\left( \frac{X_{i}}{\eta} \right)}^{\beta}{\ln\left( \frac{X_{i}}{\eta} \right)}}} - {\sum\limits_{j = 1}^{S}{{M_{j}\left( \frac{X_{j}^{\prime}}{\eta} \right)}^{\beta}{\ln\left( \frac{X_{j}^{\prime}}{\eta} \right)}}}}} & (23)\end{matrix}$ $\begin{matrix}{\frac{\partial{\ln(L)}}{\partial\eta} = {{\frac{- 1}{\beta}{\sum\limits_{i = 1}^{F}N_{i}}} + {\frac{\beta}{\eta}{\sum\limits_{i = 1}^{F}{N_{i}\left( \frac{X_{i}}{\eta} \right)}^{\beta}}} + {\frac{\beta}{\eta}{\sum\limits_{j = 1}^{S}{M_{j}\left( \frac{X_{j}^{\prime}}{\eta} \right)}^{\beta}}}}} & (24)\end{matrix}$Accelerated Life Model

For the Demeter 1.3 μm lasers studied in this working example, the modeldescribed above was used to describe 450 the degradation mechanism andtime to failure: $\begin{matrix}{{{Median}\quad{Life}} = {A*\left( \frac{1}{I} \right)^{B}{\exp\left( \frac{E_{a}}{kT} \right)}}} & (1)\end{matrix}$where:

-   I=drive current (mA)-   T=junction temperature (Kelvin)-   A=process dependent constant-   B=drive current acceleration constant-   E_(a)=activation energy (eV)-   k=Boltzmann's constant, 8.16171*10⁻⁵ eV per ° C.

After obtaining the median life for each group of failure data, anaccelerated life model was derived by estimating the constants A, B andEa in equation (3) from the lognormal and Weibull curves describedabove. Multivariable linear regression (a least squares fit) was used toestimate the parameters for the accelerated life model based on the datafit to the lognormal distribution. The results of the multivariablelinear regression for determining the parameters of the accelerated lifemodel based on the fit of the failure data to the lognormal distributionare presented below. Note that this analysis is based on the junctiontemperature of the laser. The junction temperature was determined usingthe relationsP _(D)=[0.9+6*I]*IT _(j) =T _(a) +P _(D)*θ_(j)Also, the thermal resistance was selected to be 200° C./W.

TABLE 2 Accelerated Life Model Using Lognormal Distribution A B EaAcceleration Factor 0.05 1.67 0.76 A.F. =(I_(f1)/I_(f2))^(1.67)*exp(Ea/k *(1/T_(j2) − 1/T_(j1))) Where Ea = 0.76eV

The combination of A, B and Ea resulting in the best curve fit occurswhen A=0.05, B=1.67 and Ea=0.76. Typical values of Ea for the most ofthese types of lasers are between 0.6 and 1. Based on the above,Tthepredicted Median Life is:Median Life=0.05*(1/I)^(1.67)*exp(Ea/k*(1/T)) where Ea=0.76 eV.

In the lognormal distribution, the natural logarithm of thetime-to-failure is distributed normally. The lognormal distribution hastwo parameters: μ, which is the mean of the natural logarithm of thefailure times, and σ, which is the standard deviation of the naturallogarithm of failure times. The MTTF for the lognormal distribution isgiven by exp(μ+σ²/2). The failure rate for the lognormal distribution isneither always increasing nor always decreasing. It takes differentshapes, depending on the parameters μ and σ. Based on the collectedfailure data described above, fitting the data to a lognormaldistribution resulted in a value of σ=1.64.

To confirm that the SD of the lifetime distributions had the same valuefor each of the test conditions resulting in failures, the likelihoodratio (LR) test was applied. The LR test statistic was 1.02. Under thenull hypothesis that all SD parameters are equal, the chi squaredistribution has 4 degrees of freedom. Since 1.02<χ²(1-90%, 4)=1.06, the5 SD param estimators are not statistically different at 90% significantlevel, leading to the conclusion that all of 5 SD parameters are equal.

The standardized residuals for the lognormal distribution can becalculated by $\begin{matrix}{{\hat{e}}_{i} = \frac{{\ln\left( T_{i} \right)} - {\hat{\mu}}^{\prime}}{{\hat{\sigma}}^{\prime}}} & (25)\end{matrix}$Under the model, the standardized residuals should be normallydistributed with a mean of zero and a standard deviation of one(˜N(0,1)). FIG. 5 shows the standardized residuals for the lognormaldistribution on a normal probability plot.

Having determined the value of σ, reliability curves can be constructedshowing the likelihood of failure as a function of time. FIG. 6 showsreliability predictions for typical application operating conditionsbased on the accelerated life model derived from the lognormaldistribution fit to the failure data. The slope of each line correspondsto σ, so only one additional point must be specified to determine eachreliability line. One way to select this point is by using theaccelerated life model to determine the median time to failure, whichcorresponds to the time required for 50% of the laser diodes to fail.

Multivariable linear regression has also been used to determineparameters for an accelerated life model based on the fit of the failuredata to the Weibull distribution. Note again that this analysis is basedon the junction temperature of the laser. The junction temperature wasdetermined using the relationsP _(D)=[0.9+6*I]*IT _(j) =T _(a) +P _(D)*θ_(j)Again, the thermal resistance was selected to be 200° C./W.

TABLE 3 Accelerated Life Model Using Weibull Distribution A B EaAcceleration Factor 0.003 1.54 0.87 A.F. =(I_(f1)/I_(f2))^(1.54)*exp(Ea/k *(1/T_(j2) − 1/T_(j1))) Where Ea = 0.87eV

The combination of A, B and Ea resulting in the best curve fit occurswhen A=0.003, B=1.54 and Ea=0.87. Typical values of Ea for the most ofthese types of lasers are between 0.6 and 1. Based on the above, thepredicted Median Life is:Median Life=0.003*(1/I)^(1.54)*exp(Ea/k*(1/T)) where Ea=0.87 eV.

Based on the collected failure data described above, fitting the data toa Weibull distribution resulted in a parameter value of β=0.89. Toconfirm that the shape parameter β of the lifetime distributions havethe same value for each of the test conditions resulting in failures,the likelihood ratio (LR) test is applied. The LR test statistic is0.87. Under the null hypothesis that all the β parameters are equal, thechi square distribution has 4 degrees of freedom. Since 0.87<χ²(1-90%,4)=1.06, the 5 SD parameter estimators are not statistically differentat 90% significant level, leading to the conclusion that all 5 of the SDparameters are equal.

The standardized residuals for the Weibull distribution can becalculated byê_(i)={circumflex over (β)}[ln(T _(i))−ln({circumflex over (η)})]Under this model, the standardized residuals should follow a smallestextreme value distribution with a mean of zero. FIG. 7 shows thestandardized residuals for the Weibull distribution on a smallestextreme value probability plot.

FIG. 8 shows reliability predictions for typical application operatingconditions based on the accelerated life model derived from the Weibulldistribution fit to the failure data. These reliability lines areconstructed in the same manner as those in FIG. 6, with β now serving asthe slope for each line.

The accelerated life model described above provides the expected failurerate versus lifetime behavior for a Demeter 1.3 μm FP laser diode. Oncethe parameters A, B, and Ea are determined, the model can be used toprovide expected rates of failure for properly manufactured diodesoperated at a given set operating current and temperature conditions fora specified length of time. Based on this model, the following workingexamples will demonstrate the application of an accelerated life modelin a production environment.

Previous accelerated life testing results have determined that for alaser diode operating at 40° C. and 25 mA, the FIT (Failures per 10⁹device hours) with 90% confidence is 13 or less, the cumulative failurerate in the first 2 years should be less than 0.007%, and the timerequired for failure of 1% of all devices is greater than 100 years.

Based on the accelerated life model for Demeter 1.3 μm FP laser diodesdescribed above, a variety of alternative performance test conditionsmay be selected that will lead to equivalent burn-in, waferqualification, and other performance test procedures. In an embodiment,alternative performance test conditions are selected in the followingmanner. First, a new set of operating conditions, including temperatureand operating current, is selected. The accelerated life model is thenused to determine the acceleration factor relative to a known set ofperformance test conditions. The test time at the known set ofconditions is multiplied by the acceleration factor to yield therequired performance test time at the new operating conditions. Havingdetermined the acceleration factor, a reliability chart such as FIG. 6or FIG. 8 is then consulted to determine the expected, failure rate atthe new performance test conditions. The laser devices may pass theperformance test at the new operating conditions by showing a cumulativefailure rate that is lower than the expected failure rate at the newoperating conditions.

For example, using the parameters determined above, the following testsprovide equivalent performance test conditions that can be used toverify that manufactured devices will have a long-term reliabilitybehavior of no worse than 13 FIT at 40° C. and 25 mA operation current:a) A 72 hours extended burn-in test at 100° C. and 150 mA, where thefailure rate during the test is less than 0.0001%; or b) A 1000 hourlong term aging test operating at 85° C. and 70 mA, where the failurerate is less than 0.03%. Thus, rather than developing empirical data todetermine alternative burn-in and wafer qualification conditions atelevated temperatures and currents, the accelerated life model can beused to determine equivalent burn-in and wafer qualification conditionsas a function of temperature and current.

In another example, previous empirical data suggests that Demeter 1.3 μmFP laser diodes may be adequately screened for infant mortality beforepackaging by using a burn-in procedure lasting 3 years under conditionsof 40° C. and 25 mA. Based on the accelerated life model, an equivalentto this lengthy burn-in procedure is a burn-in procedure lasting only 20hours under conditions of 100° C. and 150 mA. This equivalence may befound by determining the acceleration factor based on the equationprovided in Table 3 above.

Those skilled in the art will recognize that inherent limitations inlaser devices and other semiconductor devices restrict the range oftemperatures and currents that may be selected during accelerated agingtests, burn-in procedures, and wafer qualification procedures. While themodels may allow for prediction of equivalent burn-in and waferqualification procedures with arbitrarily high temperatures andcurrents, excessive deviations from standard operating conditions maylead to failure mechanisms in the devices that are only present underextreme operating conditions. These practical considerations place anadditional constraint on the selection of burn-in, wafer qualification,and other performance testing procedures. As a result, the methoddescribed here is useful for selecting performance testing proceduresthat operate in a minimum time without risking undue damage to devices.

While the above model has been described in connection with a particularlaser diode, those skilled in the art will recognize the applicabilityof this methodology for other laser diodes or laser devices wherereliability testing and lifetime determination are difficult due to longlifetimes and low failure rates.

1. A method for performance testing comprising: providing asemiconductor laser, wherein said semiconductor laser is mounted toallow connection of said semiconductor laser to other circuitry;specifying a first set of performance test operating conditions, whereinsaid first set of performance test operating conditions includes a firstperformance test duration; calculating a second set of performance testoperating conditions based on an accelerated life model, wherein saidsecond set of performance test operating conditions includes a secondperformance test duration; and performing a performance test on saidsemiconductor laser according to said second set of performance testoperating conditions.
 2. The method of claim 1, wherein thesemiconductor laser is a laser diode.
 3. The method of claim 1, whereinthe accelerated life model is of the formMedian Life=A*F(I)*exp[Ea/(kT)] where I represents a drive current, Trepresents a junction temperature, A represents a process dependentconstant, E_(a) represents an activation energy (eV), and k representsBoltzmann's constant, 8.16171*10⁻⁵ eV per ° C.
 4. The method of claim 3,wherein F(I) is of the formF(I)(1/I)^(B) where B represent a drive current acceleration constant.5. The method of claim 3, wherein calculating a second set ofperformance test operating conditions further comprises: identifying asecond operating current and a second operating temperature; determiningan acceleration factor based on the accelerated life model; andcalculating the second performance test duration based on theacceleration factor and the first performance test duration.
 6. Themethod of claim 1, wherein said performance test comprises a burn-inprocedure.
 7. The method of claim 1, wherein said performance testcomprises a wafer qualification procedure.
 8. A laser diode productproduced by the method comprising: providing a laser diode, wherein saidlaser diode is mounted to allow connection of said laser diode to othercircuitry; specifying a first set of performance test operatingconditions, wherein said first set of performance test operatingconditions includes a first performance test duration; calculating asecond set of performance test operating conditions based on anaccelerated life model, wherein said second set of performance testoperating conditions includes a second performance test duration; andperforming a performance test on said laser diode according to saidsecond set of performance test operating conditions.
 9. The laser diodeproduct of claim 8, wherein the performance test comprises a burn-inprocedure.
 10. The laser diode product of claim 8, wherein theaccelerated life model is of the formMedian Life=A*F(I)*exp[Ea/(kT)] where I represents a drive current, Trepresents a junction temperature, A represents a process dependentconstant, E_(a) represents an activation energy (eV), and k representsBoltzmann's constant, 8.16171*10⁻⁵ eV per ° C.
 11. The laser diodeproduct of claim 3, wherein F(I) is of the formF=(I)(1/I)^(B) where B represent a drive current acceleration constant.12. The laser diode product of claim 10, wherein calculating a secondset of performance test operating conditions further comprises:identifying a second operating current and a second operatingtemperature; determining an acceleration factor based on the acceleratedlife model; and calculating the second performance test duration basedon the acceleration factor and the first performance test duration.